IRG4PC40FD datasheet(7/35 Pages) IRF

7 / 35 page

The IGBT Structure

Diode

International Rectifier

Speed Designator

IGBT

S Standard

Generation

Modifier

F Fast

Voltage Designator

Die Size

M Short Cicuit Fast

Package Designator

600v E

800v

U UltraFast

B T0220

900v G 1000v

K Short Circuit UltraFast

P T0247

1200v

Basic IGBT Structure

The silicon cross-section of an Insulated Gate Bipolar Transistor (IGBT), the

terminal called Collector is, actually, the Emitter of the PNP. In spite of its

similarity to the cross-section of a power MOSFET, operating of the two

transistors is fundamentally different, the IGBT being a minority carrier device.

Except for the P + substrate is virtually identical to that of a power MOSFET,

both devices share a similar polysilicon gate structure and P wells with N +

source contacts. In both devices the N-type material under the P wells is sized

in thickness and reistivity to sustain the full voltage rating of the device.

However, in spite of the many similarities, he physical operation of the IGBT is

closer to that of a bipolar transistor than to that of a power MOSFET. This is

due to the P + substrate which is responsible for the minority carrier injection

into the N regtion and the resulting conductivity modulation, a significant share

of the conduction losses occur in the N region, typically 70% in a 500v device.

The part number itself contains in coded form the key features of the IGBT. An

explanation of the nomenclature in contained below.

IGBT / CoPack

Quarterly Reliability Report

Page 7 of 35

IRG4PC40FD データシート(PDF) 7 Page - International Rectifier

IRG4PC40FD データシート(HTML) 7 Page - International Rectifier

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

データシートダウンロード