4606 datasheet(3/7 Pages) TUOFENG

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P-Channel Electrical Characteristics (TA=25°C, unless otherwise noted)

Symbol

Characteristic

Test Conditions

Min.

Typ.

Max.

Unit

• Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250uA

-30

IDSS

Zero Gate Voltage Drain Current

VDS=-24V, VGS=0V

IGSS

Gate-Body Leakage Current

VGS=±20V, VDS=0V

±100

• On Characteristicsc

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-1.0

-1.3

2.0

VGS=-10V, ID=-

RDS(on)

Drain-Source On-State Resistance

VGS=-4.5V, ID=-5.0A

gfs

Forward Transconductance

VDS=-10V, ID=-6.0A

12.7

• Dynamic Characteristics d

Ciss

Input Capacitance

930

Coss

Output Capacitance

121

Crss

Reverse Transfer Capacitance

VDS=-15V, VGS=0V, f=1MHz

102

• Switching Characteristicsd

Total Gate Charge

Qgs

Gate-Source Charge

4.1

Qgd

Gate-Drain Charge

VDS=-15V, ID=-3A, VGS=-10V

2.6

td(on)

Turn-on Delay Time

9.5

Turn-on Rise Time

5.4

td(off)

Turn-off Delay Time

42.5

Turn-off Fall Time

VDD=-15V, RL=5Ω, ID=-3A,

VGEN=-10V, RG=6Ω

13.6

• Drain-Source Diode Characteristics

VSD

Drain-Source Diode Forward Voltage

VGS=0V, IS=-2.0A

-1.0

Note:

b: Pulse width limited by maximum junction temperature.

c: Guaranteed by design , not subject to production testing .

Shenzhen Tuofeng Semiconductor Technology co., LTD

4606

6.0

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