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4606 データシート(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

部品番号 4606
部品情報  Complementary High Density Trench MOSFET
PDF  7 Pages
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メーカー  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
ホームページ  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

4606 データシート(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

  4606 Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co 4606 Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co 4606 Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co 4606 Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co 4606 Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co 4606 Datasheet HTML 6Page - Shenzhen Tuofeng Semiconductor Technology Co 4606 Datasheet HTML 7Page - Shenzhen Tuofeng Semiconductor Technology Co  
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N-Channel Electrical Characteristics(TA=25°C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
• Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
IDSS
Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
-
-
50
nA
IGSS
Gate-Body Leakage Current
VGS=±20V, VDS=0V
-
-
±100
nA
• On Characteristicsc
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1.0
1.4
3.0
V
VGS=10V, ID= 6.9A
-
25
28
RDS(on)
Drain-Source On-State Resistance
VGS=4.5V, ID= 5.0A
-
38
42
m
Ω
gfs
Forward Transconductance
VDS=5V, ID= 5.0A
-
6.0
-
S
• Dynamic Characteristics d
Ciss
Input Capacitance
-
398
-
Coss
Output Capacitance
-
67
-
Crss
Reverse Transfer Capacitance
VDS=15V, VGS=0V, f=1MHz
-
61
-
pF
• Switching Characteristicsd
Qg
Total Gate Charge
-
7.4
-
Qgs
Gate-Source Charge
-
1.7
-
Qgd
Gate-Drain Charge
VDS=10V, ID=1A, VGS=10V
-
1.3
-
nC
td(on)
Turn-on Delay Time
-
8.0
-
tr
Turn-on Rise Time
-
11.2
-
td(off)
Turn-off Delay Time
-
17.2
-
tf
Turn-off Fall Time
VDD= 15V, RL=15Ω, ID=1A,
VGEN=10V, RG=6Ω
-
7.54
-
nS
• Drain-Source Diode Characteristics
VSD
Drain-Source Diode Forward Voltage
VGS=0V, IS=2.0A
-
-
1.0
V
Note:
b: Pulse width limited by maximum junction temperature.
c: Guaranteed by design , not subject to production testing .
Shenzhen Tuofeng Semiconductor Technology co., LTD
4606



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