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4606 データシート(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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4606 データシート(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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2 / 7 page ![]() 2 N-Channel Electrical Characteristics(TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit • Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V - - 50 nA IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V - - ±100 nA • On Characteristicsc VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1.0 1.4 3.0 V VGS=10V, ID= 6.9A - 25 28 RDS(on) Drain-Source On-State Resistance VGS=4.5V, ID= 5.0A - 38 42 m Ω gfs Forward Transconductance VDS=5V, ID= 5.0A - 6.0 - S • Dynamic Characteristics d Ciss Input Capacitance - 398 - Coss Output Capacitance - 67 - Crss Reverse Transfer Capacitance VDS=15V, VGS=0V, f=1MHz - 61 - pF • Switching Characteristicsd Qg Total Gate Charge - 7.4 - Qgs Gate-Source Charge - 1.7 - Qgd Gate-Drain Charge VDS=10V, ID=1A, VGS=10V - 1.3 - nC td(on) Turn-on Delay Time - 8.0 - tr Turn-on Rise Time - 11.2 - td(off) Turn-off Delay Time - 17.2 - tf Turn-off Fall Time VDD= 15V, RL=15Ω, ID=1A, VGEN=10V, RG=6Ω - 7.54 - nS • Drain-Source Diode Characteristics VSD Drain-Source Diode Forward Voltage VGS=0V, IS=2.0A - - 1.0 V Note: b: Pulse width limited by maximum junction temperature. c: Guaranteed by design , not subject to production testing . Shenzhen Tuofeng Semiconductor Technology co., LTD 4606 |
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