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MIC5166 データシート(PDF) 16 Page - Microchip Technology

部品番号 MIC5166
部品情報  3A High-Speed, Low-VIN DDR Terminator
PDF  36 Pages
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メーカー  MICROCHIP [Microchip Technology]
ホームページ  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MIC5166 データシート(HTML) 16 Page - Microchip Technology

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MIC5166
DS20006085B-page 16
 2018 - 2019 Microchip Technology Inc.
FIGURE 4-2:
Power Good Threshold.
The PG has an open-drain output. A pull-up resistor
must be connected to VBIAS, VIN, or an external source.
The external source voltage must not exceed the
maximum rating of the pin. The PG pin can be
connected to another regulator’s enable pin for
sequencing of the outputs.
4.6
VBIAS Requirement
A 1 µF ceramic input capacitor is required on the VBIAS
pin. To achieve the ultra-fast transient response, the
MIC5166 uses an all N-channel power output stage as
shown in the Functional Block Diagram. The high-side
N-channel MOSFET requires the VBIAS voltage to be
2.2V higher than the VTT to be able to fully enhance the
high-side MOSFET.
4.7
VIN Requirement
VIN is used to supply the rail voltage for the high-side
N-channel power output stage. It is normally connected
to VDDQ, but it can be connected to a lower voltage to
reduce power dissipation. In this case, the input voltage
must be higher than the VTT voltage to ensure that the
output stage is not operating in dropout.
V
REF
PG
0.90*VREF
0.88*VREF
0V
0V
1.10*VREF
1.08*VREF



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