OptiMOS™ 5 60 V Power MOSFET in SuperSO8 5x6

(SSO8) package

Infineon’s new best-in-class OptiMOS™ 5 60 V Power

MOSFET in SuperSO8 package (ISC010N06NM5) offers low

on-state resistance RDS(on) at 25˚C and 175˚C, and high con-

tinuous current (up to 330 A). Infineon's OptiMOS™

MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5

product portfolio and enable higher power density in addi-

tion to improved robustness, responding to the need for

lower system cost and increased performance.

Low reverse recovery charge (Qrr) improves the system reli-

ability by providing a significant reduction of voltage over-

shoot, which minimizes the need for snubber circuits, result-

ing in less engineering cost and effort.

Benefits

 Lower conduction losses, higher power density and efficiency

 Less paralleling for system cost reduction

 Reduced overshoot

 Excellent thermal behavior

Product collaterals / Online support

Product page

Application example

Features

 Lowest R

DS(on)

 Low R

thJC

 Low reverse recovery charge (Q

rr)

 Higher operating temperature rating to 175°C

Target applications

 Telecom

 Server

 Power tools

 Low voltage drives

 Class D audio, solar micro inverter, etc.

Product overview incl. data sheet link

OPN

SP Number

Package

ISC010N06NM5

SP005630896

PG-TSON-8

Competitive advantage

 Market leader with best-in-class R

DS(on)