BUR52 datasheet(1/4 Pages) STMICROELECTRONICS

部品番号	BUR52

部品情報	HIGH CURRENT NPN SILICON TRANSISTOR

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BUR52

HIGH CURRENT NPN SILICON TRANSISTOR

s

SGS-THOMSON PREFERRED SALESTYPE

s

NPN TRANSISTOR

s

MAINTAINS GOOD SWITCHING

PERFORMANCE EVEN WITHOUT

NEGATIVE BASE DRIVE

APPLICATIONS

s

LINEAR AND SWITCHING INDUSTRIAL

EQUIPMENT

DESCRIPTION

The BUR52 is a silicon multiepitaxial planar NPN

transistors in modified Jedec TO-3 metal case,

intented

for

use

in

switching

and

linear

applications in military and industrial equipment.

INTERNAL SCHEMATIC DIAGRAM

June 1997

1

2

TO-3

(version " P ")

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage (IE = 0)

350

V

VCEO

Collector-Emitter Voltage (IB = 0)

250

V

VEBO

Emitter-Base Voltage (IC = 0)

10

V

IC

Collector Current

60

A

ICM

Collector Peak Current (tp = 10 ms)

80

A

IB

Base Current

16

A

Ptot

Total Dissipation at Tc

≤ 25 oC

350

W

Tstg

Storage Temperature

-65 to 200

oC

Tj

Max. Operating Junction Temperature

200

oC

1/4

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同様の説明 - BUR52

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