ESDALC6V1P3 datasheet(3/9 Pages) STMICROELECTRONICS

部品番号	ESDALC6V1P3

部品情報	ASD (Application Specific Devices) Low capacitance TRANSIL??arrays for ESD protection

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ESDALC6V1Px

Characteristics

3/9

Figure 1.

Peak power dissipation versus

initial junction temperature

Figure 2.

Peak pulse power versus

exponential pulse duration

(Tj initial = 25° C)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

100

125

150

175

PP[Tj initial] / PPP [Tj initial=25°C]

Tj(°C)

100

1000

100

t (µs)

(W)

T initial = 25°C

Figure 3.

Clamping voltage versus peak

pulse current (typical values,

rectangular waveform)

Figure 4.

Forward voltage drop versus peak

forward current (typical values)

Figure 5.

Junction capacitance versus

reverse applied voltage (typical

values)

Figure 6.

Relative variation of leakage

current versus junction

temperature (typical values)

0.1

1.0

10.0

100.0

1020

3040

(V)

(A)

t = 2.5µs

T initial = 25°C

1.E-03

1.E-02

1.E-01

1.E+00

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

(A)

(V)

T = 25°C

T = 125°C

V (V)

C(pF)

F=1MHz

=30mV

T =25°C

OSC

RMS

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

100

125

150

R [Tj]/ IR [Tj=25°C]

R =3 V

Tj(°C)

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