STM32L433CB datasheet(97/227 Pages) STMICROELECTRONICS

97 / 227 page

DS11449 Rev 7

97/19

STM32L433xx

Electrical characteristics

194

6.3.2

Operating conditions at power-up / power-down

The parameters given in Table 23 are derived from tests performed under the ambient

temperature condition summarized in Table 22.

The requirements for power-up/down sequence specified in Section 3.9.1: Power supply

schemes must be respected.

6.3.3

Embedded reset and power control block characteristics

The parameters given in Table 24 are derived from tests performed under the ambient

temperature conditions summarized in Table 22: General operating conditions.

Table 23. Operating conditions at power-up / power-down

Symbol

Parameter

Conditions

Min

Max

Unit

tVDD

VDD rise time rate

∞

µs/V

VDD fall time rate

∞

tVDDA

VDDA rise time rate

∞

VDDA fall time rate

∞

tVDDUSB

VDDUSB rise time rate

∞

VDDUSB fall time rate

∞

Table 24. Embedded reset and power control block characteristics

Symbol

Parameter

Conditions(1)

Min

Typ

Max

Unit

tRSTTEMPO(2)

Reset temporization after

BOR0 is detected

VDD rising

250

400

μs

VBOR0(2)

Brown-out reset threshold 0

Rising edge

1.62

1.66

1.7

Falling edge

1.6

1.64

1.69

VBOR1

Brown-out reset threshold 1

Rising edge

2.06

2.1

2.14

Falling edge

1.96

2.04

VBOR2

Brown-out reset threshold 2

Rising edge

2.26

2.31

2.35

Falling edge

2.16

2.20

2.24

VBOR3

Brown-out reset threshold 3

Rising edge

2.56

2.61

2.66

Falling edge

2.47

2.52

2.57

VBOR4

Brown-out reset threshold 4

Rising edge

2.85

2.90

2.95

Falling edge

2.76

2.81

2.86

VPVD0

Programmable voltage

detector threshold 0

Rising edge

2.1

2.15

2.19

Falling edge

2.05

2.1

VPVD1

PVD threshold 1

Rising edge

2.26

2.31

2.36

Falling edge

2.15

2.20

2.25

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