STM32L433CB datasheet(112/227 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32L433xx

112/19

DS11449 Rev 7

Table 39. Typical current consumption in Run, with different codesrunning from

SRAM1 and power supplied by external SMPS (VDD12 = 1.10 V)

Symbol

Parameter

Conditions(1)

TYP

Unit

TYP

Unit

Voltage

scaling

Code

25 °C

IDD_ALL

(Run)

Supply

current in

Run mode

fHCLK = fHSE up to

48 MHz included,

bypass mode

PLL ON above

48 MHz all

peripherals disable

Reduced code(2)

1.04

µA/MHz

Coremark

0.94

Dhrystone 2.1

1.04

Fibonacci

1.04

While(1)

0.99

Reduced code(2)

3.10

Coremark

2.79

Dhrystone 2.1

3.07

Fibonacci

3.08

While(1)

2.92

1. All values are obtained by calculation based on measurements done without SMPS and using following parameters: SMPS

input = 3.3 V, SMPS efficiency = 85%, VDD12 = 1.10 V

2. Reduced code used for characterization results provided in Table 26, Table 28, Table 30.

Table 40. Typical current consumption in Run, with different codesrunning from

SRAM1 and power supplied by external SMPS (VDD12 = 1.05 V)

Symbol

Parameter

Conditions(1)

TYP

Unit

TYP

Unit

Voltage

scaling

Code

25 °C

IDD_ALL

(Run)

Supply

current in

Run mode

fHCLK = fHSE up to

48 MHz included,

bypass mode

PLL ON above

48 MHz all

peripherals disable

Reduced code(2)

0.95

µA/MHz

Coremark

0.86

Dhrystone 2.1

0.94

Fibonacci

0.94

While(1)

0.90

1. All values are obtained by calculation based on measurements done without SMPS and using following parameters: SMPS

input = 3.3 V, SMPS efficiency = 85%, VDD12 = 1.05 V

2. Reduced code used for characterization results provided in Table 26, Table 28, Table 30.

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