MMFTP923KDMP

Dual P-Channel Enhancement Mode MOSFET

Features

• Typical ESD Protection HBM Class 1B

Applications

• Portable appliances

• High speed switch

• Battery management

Absolute Maximum Ratings(at Ta = 25

℃ unless otherwise specified)

Thermal Characteristics

1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C.

2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.1 mH, Rg = 25 Ω, -ID = 16.8 A, VGS = 8 V.

3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

Classification Voltage Range(V)

0A

< 125

0B

125 to < 250

1A

250 to < 500

1B

500 to < 1000

1C

1000 to < 2000

2

2000 to < 4000

3A

4000 to < 8000

3B

≥ 8000

Parameter

Symbol

Value

Unit

Drain-Source Voltage

-VDS

20

V

Gate-Source Voltage

VGS

± 8

V

Drain Current

-ID

4.5

A

Pulsed Drain Current 1)

-IDM

20

A

Avalanche Current

-IAS

16.8

A

Single Pulse Avalanche Energy 2)

EAS

14.1

mJ

Power Dissipation

Tc = 25

℃

Ta = 25

℃

PD

7.8

1.47

W

Operating Junction and Storage Temperature Range

Tj ,Tstg

- 55 to + 150

℃

Parameter

Symbol

Max.

Unit

Thermal Resistance from Junction to Case

RθJC

10

℃/W

Thermal Resistance from Junction to Ambient 3)

RθJA

90

℃/W

12

3

6

5

4

Q1

Q2

1

2

3

45

6

Q2

Drain

Q1

Drain

Q1: 1. Sourse 2. Gate 6. Drain

Q2: 4. Sourse 5. Gate 3. Drain

DFN2020

Plastic Package

+86-769-22857832

huixin@hx kj.hk

Rev.01

Page 1 of 7