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MMFTP923KDMP データシート(PDF) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

部品番号 MMFTP923KDMP
部品情報  Dual P-Channel Enhancement Mode MOSFET
PDF  7 Pages
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メーカー  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
ホームページ  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

MMFTP923KDMP データシート(HTML) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

  MMFTP923KDMP Datasheet HTML 1Page - Guangdong Huixin Electronic Technology Co., Ltd. MMFTP923KDMP Datasheet HTML 2Page - Guangdong Huixin Electronic Technology Co., Ltd. MMFTP923KDMP Datasheet HTML 3Page - Guangdong Huixin Electronic Technology Co., Ltd. MMFTP923KDMP Datasheet HTML 4Page - Guangdong Huixin Electronic Technology Co., Ltd. MMFTP923KDMP Datasheet HTML 5Page - Guangdong Huixin Electronic Technology Co., Ltd. MMFTP923KDMP Datasheet HTML 6Page - Guangdong Huixin Electronic Technology Co., Ltd. MMFTP923KDMP Datasheet HTML 7Page - Guangdong Huixin Electronic Technology Co., Ltd.  
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Characteristics at Ta = 25
℃ unless otherwise specified
Parameter
Symbol
Min.
Typ.
Max.
Unit
STATIC PARAMETERS
Drain-Source Breakdown Voltage
at -ID = 250 µA
-V(BR)DSS
20
-
-
V
Drain-Source Leakage Current
at -VDS = 20 V
-IDSS
-
-
1
µA
Gate Leakage Current
at VGS = ± 4.5 V
at VGS = ± 8 V
IGSS
-
-
-
-
± 3
± 10
µA
Gate-Source Threshold Voltage
at VDS = VGS, -ID = 250 µA
-VGS(th)
0.4
-
1.0
V
Drain-Source On-State Resistance
at -VGS = 4.5 V, -ID = 3.8 A
at -VGS = 2.5 V, -ID = 3.3 A
at -VGS = 1.8 V, -ID = 1 A
at -VGS = 1.5 V, -ID = 0.5 A
RDS(on)
-
-
-
-
-
-
-
-
54
70
104
120
mΩ
DYNAMIC PARAMETERS
Forward Transconductance
at -VDS = 10 V, -ID = 3.8 A
gfs
-
7
-
S
Gate Resistance
at VGS = 0 V, VDS = 0 V, f = 1 MHz
Rg
-
4
-
Ω
Input Capacitance
at VGS = 0 V, -VDS = 10 V, f = 1 MHz
Ciss
-
960
-
pF
Output Capacitance
at VGS = 0 V, -VDS = 10 V, f = 1 MHz
Coss
-
140
-
pF
Reverse Transfer Capacitance
at VGS = 0 V, -VDS = 10 V, f = 1 MHz
Crss
-
125
-
pF
Gate charge total
at -VDS = 10 V, -ID = 3.8 A, -VGS = 4.5 V
at -VDS = 10 V, -ID = 3.8 A, -VGS = 2.5 V
Qg
-
-
10.5
6.6
-
-
nC
Gate to Source Charge
at -VDS = 10 V, -ID = 3.8 A, -VGS = 4.5 V
Qgs
-
0.9
-
nC
Gate to Drain Charge
at -VDS = 10 V, -ID = 3.8 A, -VGS = 4.5 V
Qgd
-
3.5
-
nC
Turn-On Delay Time
at -VDD = 10 V, -ID = 3.8 A, -VGS = 4.5 V, Rg = 4.7 Ω
td(on)
-
18.5
-
ns
Turn-On Rise Time
at -VDD = 10 V, -ID = 3.8 A, -VGS = 4.5 V, Rg = 4.7 Ω
tr
-
63
-
ns
Turn-Off Delay Time
at -VDD = 10 V, -ID = 3.8 A, -VGS = 4.5 V, Rg = 4.7 Ω
td(off)
-
21
-
ns
Turn-Off Fall Time
at -VDD = 10 V, -ID = 3.8 A, -VGS = 4.5 V, Rg = 4.7 Ω
tf
-
9.5
-
ns
Body-Diode PARAMETERS
Drain-Source Diode Forward Voltage
at -IS = 1 A, VGS = 0 V
-VSD
-
-
1.2
V
Body-Diode Continuous Current
-IS
-
-
4.5
A
Body Diode Reverse Recovery Time
at -IS = 3.8 A, -VDD = 20 V, di/dt = 100 A / µs
trr
-
12
-
ns
Body Diode Reverse Recovery Charge
at -IS = 3.8 A, -VDD = 20 V, di/dt = 100 A / µs
Qrr
-
3.8
-
nC
+86-769-22857832
huixin@hx kj.hk
Rev.01
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