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TXB0604RUTR データシート(PDF) 21 Page - Texas Instruments |
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TXB0604RUTR データシート(HTML) 21 Page - Texas Instruments |
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21 / 45 page ![]() 7.3 Feature Description 7.3.1 Architecture The TXB0604 device architecture (see Figure 7-1) does not require a direction-control signal to control the direction of data flow from A to B or from B to A. In a DC state, the output drivers of the device maintain a high or low, but are designed to be weak, so the output drivers can be overdriven by an external driver when data on the bus flows the opposite direction. The output one-shots detect rising or falling edges on the A or B ports. During a rising edge, the one-shot turns on the PMOS transistors (T1, T3) for a short duration, which speeds up the low-to-high transition. Similarly, during a falling edge, the one-shot turns on the NMOS transistors (T2, T4) for a short duration, which speeds up the high-to-low transition. The typical output impedance during output transition is approximately 28Ω at VCCO = 1.8V, approximately 22Ω at VCCO = 2.5V, and 21Ω at VCCO = 3.3V. One Shot One Shot 1 k T1 T2 One Shot One Shot 1 k T3 T4 A B VCCA VCCB Figure 7-1. Architecture of TXB0604 Device I/O Cell www.ti.com TXB0604 SCES983A – OCTOBER 2025 – REVISED MARCH 2026 Copyright © 2026 Texas Instruments Incorporated Submit Document Feedback 21 Product Folder Links: TXB0604 |
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