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ADRF5714BCCZN-R7 データシート(PDF) 3 Page - Analog Devices

部品番号 ADRF5714BCCZN-R7
部品情報  Silicon Digital Attenuator, 1-Bit, 100 MHz to 30 GHz
PDF  14 Pages
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メーカー  AD [Analog Devices]
ホームページ  http://www.analog.com
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ADRF5714BCCZN-R7 データシート(HTML) 3 Page - Analog Devices

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Data Sheet
ADRF5714
SPECIFICATIONS
analog.com
Rev. 0 | 3 of 14
Positive supply voltage (VDD) = 3.3 V, negative supply voltage (VSS) = −3.3 V, control voltage (VCTRL) = 0 V or VDD, and case temperature
(TCASE) = 25°C with a 50 Ω system, unless otherwise noted. VCTRL refers to the control voltage on the D0 pin.
Table 1. Specifications
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
FREQUENCY RANGE
f
100
30,000
MHz
INSERTION LOSS
100 MHz to 8 GHz
0.7
dB
8 GHz to 18 GHz
0.9
dB
18 GHz to 30 GHz
1.3
dB
RETURN LOSS
ATTIN and ATTOUT pins, attenuation state
100 MHz to 8 GHz
25
dB
8 GHz to 18 GHz
22
dB
18 GHz to 30 GHz
17
dB
ATTENUATION
Range
Between minimum and maximum attenuation states
16
dB
Step Size
Between any successive attenuation states
16
dB
Accuracy
Referenced to insertion loss
100 MHz to 8 GHz
±0.10
dB
8 GHz to 18 GHz
±0.15
dB
18 GHz to 30 GHz
±0.20
dB
RELATIVE PHASE
Referenced to insertion loss
100 MHz to 8 GHz
12
Degrees
8 GHz to 18 GHz
25
Degrees
18 GHz to 30 GHz
45
Degrees
SWITCHING
All attenuation states at input power (PIN) = 10 dBm
Rise Time and Fall Time
tRISE, tFALL
10% to 90% of RF output (RFOUT)
20
ns
On Time and Off Time
tON, tOFF
50% triggered control to 90% of RFOUT
50
ns
RF Amplitude Settling Time
0.1 dB
50% triggered control to 0.1 dB of final RFOUT
110
ns
0.05 dB
50% triggered control to 0.05 dB of final RFOUT
140
ns
RF Phase Settling Time
f = 1 GHz
1°
50% triggered control to 1° of final RFOUT
65
ns
INPUT LINEARITY1
100 MHz to 30 GHz
0.1 dB Power Compression
P0.1dB
Insertion Loss State
33
dBm
16 dB Attenuation State
30
dBm
Third-Order Intercept
IP3
Two-tone PIN = 20 dBm per tone, Δf = 1 MHz, all
attenuation states
Insertion Loss State
51
dBm
16 dB Attenuation State
49
dBm
DIGITAL CONTROL INPUT
D0 pin
Voltage
Low
VINL
0
0.8
V
High
VINH
1.2
3.3
V
Current
Low
IINL
−33
µA
High
IINH
<1
µA



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