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T820-XXXW データシート(PDF) 3 Page - STMicroelectronics |
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T820-XXXW データシート(HTML) 3 Page - STMicroelectronics |
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3 / 5 page ![]() T820-xxxW / T830-xxxW 3/5 0 123 456 78 0 2 4 6 8 10 180 O =180 o = 120 o =90 o =60 o =30 o T(RMS) I(A) P(W) Fig. 1: Maximum power dissipation versus RMS on-state current. 0 10 20 30 4050607080 90 100 110 120 130 0 2 4 6 8 10 =180 o Tcase( C) o I(A) T(RMS) Fig. 3: RMS on-state current versus case temper- ature. 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt Tj( C) o Ih -40 -20 0 20 40 60 80 100 120 140 Igt[Tj] Igt[Tj=25 C] o Ih[Tj] Ih[Tj=25 C] o Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. P(W) 0 10 203040506070 8090 100 110 120 130 0 2 4 6 8 10 -90 -95 -100 -105 -110 -115 -120 -125 Rth = 0 C/W 2.5 C/W 5C/W 7.5 C/W o o o o Tamb(C) o Tcase ( C) o Fig. 2: Correlation between maximum power dissi- pation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. 1E-3 1E-2 1E-1 1E +0 1E +1 1E+2 5E+2 0.01 0.1 1 Zth/Rth Zth(j-c) Zth(j-a) tp(s) Fig. 4: Thermal transient impedance junction to case and junction to ambient versus pulse dura- tion. 110 100 1000 0 20 40 60 80 100 Tj initial = 25 C o Number of cycles I(A) TSM Fig. 6: Non repetitive surge peak on-state current versus number of cycles. |
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