Features

– 15 mA Active Current

–20 µA CMOS Standby Current

– Internal Address and Data Latches for 64 Bytes

– Internal Control Timer

– Page Write Cycle Time: 10 ms Maximum

– 1 to 64 Byte Page Write Operation

– Endurance: 100,000 Cycles

– Data Retention: 10 Years

1.

Description

The AT28BV64B is a high-performance electrically erasable programmable read only-

memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manu-

factured with Atmel’s advanced nonvolatile CMOS technology, the device offers

access times to 200 ns with power dissipation of just 54 mW. When the device is

deselected, the CMOS standby current is less than 20 µA.

The AT28BV64B is accessed like a static RAM for the read or write cycle without the

need for external components. The device contains a 64 byte page register to allow

writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to

64 bytes of data are internally latched, freeing the address and data bus for other

operations. Following the initiation of a write cycle, the device will automatically write

the latched data using an internal control timer. The end of a write cycle can be

detected by DATA polling of I/O7. Once the end of a write cycle has been detected a

new access for a read or write can begin.

Atmel’s AT28BV64B has additional features to ensure high quality and manufactura-

bility. A software data protection mechanism guards against inadvertent writes. The

device also includes an extra 64 bytes of EEPROM for device identification or

tracking.

64K (8K x 8)

Battery-Voltage

Parallel

EEPROM

with Page Write

and Software

Data Protection

AT28BV64B

0299H–PEEPR–10/06