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LT3478 データシート(PDF) 18 Page - Linear Technology |
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LT3478 データシート(HTML) 18 Page - Linear Technology |
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18 / 24 page ![]() LT3478/LT3478-1 18 34781f Local heating from the nearby inductor and Schottky diode will also add to the final junction temperature of the IC. Based on empirical measurements, the effect of diode and inductor heating on the LT3478-1 junction temperature can be approximated as: ΔTJ (LT3478-1) = 5°C/W • (PDIODE + PINDUCTOR) PDIODE = (1 – D) • VF • IL(AVE) 1 – D = 0.316 VF = 0.5V IL(AVE) = 2.41 PDIODE = 0.316 • 0.5 • 2.41 = 0.381W PINDUCTOR = IL(AVE) 2 • DCR DCR = inductor DC resistance (assume 0.05Ω) PINDUCTOR = (2.41) 2 • 0.05 = 0.29W The LT3478/LT3478-1 use a thermally enhanced FE pack- age. With proper soldering to the Exposed Pad on the underside of the package combined with a full copper plane underneath the device, thermal resistance (θJA) will be about 35°C/W. For an ambient temperature of TA = 70°C, the junction temperature of the LT3478-1 for the example application described above, can be calculated as: TJ (LT3478-1) = TA + θJA(PTOT) + 5(PDIODE + PINDUCTOR) = 70 + 35(1.25) + 5(0.671) = 70 + 44 + 4 = 118°C In the above example, efficiency was initially assumed to be η = 0.89. A lower efficiency (η) for the converter will increase IL(AVE) and hence increase the calculated value for TJ. η can be calculated as: η = POUT/(POUT + PLOSS) POUT = VOUT • ILED = 17.15W PLOSS (estimated) = PIC + PDIODE + PINDUCTOR = 1.92W η = 17.15/(17.15 + 1.92) = 0.9 If an application is built, the inductor current can be mea- sured and a new value for junction temperature estimated. Ideally a thermal measurement should be made to achieve the greatest accuracy for TJ. Note: The junction temperature of the IC can be reduced if a lower VIN supply is available – separate from the inductor supply VS. In the above example, driving VIN from an available 3V source (instead of VS = 8V) reduces input quiescent losses in item(4) from 0.597W to 0.224W, resulting in a reduction of TJ from 118°C to 105°C. Layout Considerations As with all switching regulators, careful attention must be given to PCB layout and component placement to achieve optimal thermal,electrical and noise performance (Figure 12). The exposed pad of the LT3478/LT3478-1 (Pin 17) is the only GND connection for the IC. The exposed pad should be soldered to a continuous copper ground plane underneath the device to reduce die temperature and maximize the power capability of the IC. The ground path for the RT resistor and VC capacitor should be taken from nearby the analog ground connection to the exposed pad (near Pin 9) separate from the power ground connection to the exposed pad (near Pin 16). The bypass capacitor for VIN should be placed as close as possible to the VIN pin and the analog ground connection. SW pin voltage rise and fall times are designed to be as short as possible for maximum efficiency. To reduce the effects of both radiated and conducted noise, the area of the SW trace should be kept as small as possible. Use a ground plane under the switching regulator to minimize interplane coupling. The schottky diode and output capacitor should be placed as close as possible to the SW node to minimize this high frequency switching path. To minimize LED current sensing errors for the LT3478, the terminals of the external sense resistor RSENSE should be tracked to the VOUT and LED pins separate from any high current paths. APPLICATIO S I FOR ATIO |
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