2SA1387 datasheet(2/4 Pages) ISC

部品番号	2SA1387

部品情報	Silicon PNP Power Transistors

PDF	4 Pages

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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2 / 4 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA1387

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=-10mA ;IB=0

-50

VCEsat

Collector-emitter saturation voltage

IC=-3A ;IB=-0.075A

-0.15

-0.4

VBEsat

Base-emitter saturation voltage

IC=-3A ; IB=-0.075A

-0.8

-1.2

ICBO

Collector cut-off current

VCB=-50V; IE=0

-1

μA

IEBO

Emitter cut-off current

VEB=-7V; IC=0

-1

μA

hFE-1

DC current gain

IC=-1A ; VCE=-1V

150

400

hFE-2

DC current gain

IC=-3A ; VCE=-1V

Trainsition frequency

IC=-1A ; VCE=-4V

MHz

Cob

Collector output capacitance

IE=0; VCE=-10V;f=1MHz

200

Switching times

Ton

Turn-on time

0.2

μs

Storage time

1.0

μs

Fall time

IB1=-IB2=-0.075A

VCC≈-30V;RL=10Ω

0.2

μs

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