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LTC4446IMS8E-PBF データシート(PDF) 3 Page - Linear Technology |
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LTC4446IMS8E-PBF データシート(HTML) 3 Page - Linear Technology |
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3 / 12 page  LTC4446 3 4446f Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LTC4446E is guaranteed to meet specifications from 0°C to 85°C. Specifications over the –40°C to 85°C operating temperature range are assured by design, characterization and correlation ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VCC = VBOOST = 12V, VTS = GND = 0V, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Low Side Gate Driver Output (BG) VOH(BG) BG High Output Voltage IBG = –10mA, VOH(BG) = VCC – VBG 0.7 V VOL(BG) BG Low Output Voltage IBG = 100mA l 55 110 mV IPU(BG) BG Peak Pull-Up Current l 23 A RDS(BG) BG Pull-Down Resistance l 0.55 1.1 Ω Switching Time (BINP (TINP) is Tied to Ground While TINP (BINP) is Switching. Refer to Timing Diagram) tPLH(TG) TG Low-High (Turn-On) Propagation Delay l 25 45 ns tPHL(TG) TG High-Low (Turn-Off) Propagation Delay l 22 40 ns tPLH(BG) BG Low-High (Turn-On) Propagation Delay l 19 35 ns tPHL(BG) BG High-Low (Turn-Off) Propagation Delay l 14 30 ns tDM(BGTG) Delay Matching BG Turn-Off and TG Turn-On l –15 10 35 ns tDM(TGBG) Delay Matching TG Turn-Off and BG Turn-On l –25 –3 25 ns tr(TG) TG Output Rise Time 10% – 90%, CL = 1nF 10% – 90%, CL = 10nF 8 80 ns ns tf(TG) TG Output Fall Time 10% – 90%, CL = 1nF 10% – 90%, CL = 10nF 5 50 ns ns tr(BG) BG Output Rise Time 10% – 90%, CL = 1nF 10% – 90%, CL = 10nF 6 60 ns ns tf(BG) BG Output Fall Time 10% – 90%, CL = 1nF 10% – 90%, CL = 10nF 3 30 ns ns with statistical process controls. The LTC4446I is guaranteed over the full –40°C to 85°C operating temperature range. Note 3: TJ is calculated from the ambient temperature TA and power dissipation PD according to the following formula: TJ = TA + (PD • θJA°C/W) Note 4: Failure to solder the exposed back side of the MS8E package to the PC board will result in a thermal resistance much higher than 40°C/W. TYPICAL PERFORMANCE CHARACTERISTICS VCC Supply Quiescent Current vs Voltage BOOST-TS Supply Quiescent Current vs Voltage VCC Supply Current vs Temperature VCC SUPPLY VOLTAGE (V) 0 0 50 150 200 250 6 7 8 9 10 11 12 13 450 4446 G01 100 12345 14 300 350 400 TINP = BINP = 0V TINP(BINP) = 12V TA = 25°C BOOST = 12V TS = GND BOOST SUPPLY VOLTAGE (V) 0 0 50 150 200 250 6 7 8 9 10111213 400 4446 G02 100 12345 14 300 350 TINP = BINP = 0V TINP = 0V, BINP = 12V TINP = 12V, BINP = 0V TA = 25°C VCC = 12V TS = GND TEMPERATURE (°C) 350 360 370 4446 G03 330 300 –40 –25 –10 5 20 35 50 65 80 95 110 125 380 340 320 310 TINP = BINP = 0V VCC = BOOST = 12V TS = GND TINP(BINP) = 12V |
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