EPA080AV datasheet(1/2 Pages) EXCELICS

部品番号	EPA080AV

部品情報	High Efficiency Heterojunction Power FET

PDF	2 Pages

Scroll/Zoom	100%

メーカー	EXCELICS [Excelics Semiconductor, Inc.]

ホームページ

Logo

1 / 2 page

Excelics

EPA080A/EPA080AV

DATA SHEET

High Efficiency Heterojunction Power FET

••

+27.5dBm TYPICAL OUTPUT POWER

••

9.5dB TYPICAL POWER GAIN FOR EPA080A AND

10.5dB FOR EPA080AV AT 18GHz

••

0.3 X 800 MICRON RECESSED “MUSHROOM” GATE

••

Si3N4 PASSIVATION

••

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

••

EPA080AV WITH VIA HOLE SOURCE GROUNDING

••

Idss SORTED IN 20mA PER BIN RANGE

ELECTRICAL CHARACTERISTICS (Ta = 25

OC)

SYMBOLS

PARAMETERS/TEST CONDITIONS

EPA080A

EPA080AV

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

Output Power at 1dB Compression

f=12GHz

27.5

P1dB

Vds=8V, Ids=50% Idss

f=18GHz

26

27.5

26

27.5

dBm

Gain at 1dB Compression

f=12GHz

10.5

12.5

11.0

13.0

G1dB

Vds=8V, Ids=50% Idss

f=18GHz

9.5

10.5

dB

Gain at 1dB Compression

PAE

Vds=8V, Ids=50% Idss

f=12GHz

45

46

%

Idss

Saturated Drain Current

Vds=3V, Vgs=0V

130

240

320

130

240

320

mA

Gm

Transconductance

Vds=3V, Vgs=0V

160

260

160

260

mS

Vp

Pinch-off Voltage

Vds=3V, Ids=2.0mA

-1.0

-2.5

-1.0

-2.5

V

BVgd

Drain Breakdown Voltage Igd=1.0mA

-11

-15

-11

-15

V

BVgs

Source Breakdown Voltage Igs=1.0mA

-7

-14

-7

-14

V

Rth

Thermal Resistance (Au-Sn Eutectic Attach)

55

40

oC/W

MAXIMUM RATINGS AT 25

OC

SYMBOLS

PARAMETERS

EPA080A

EPA080AV

ABSOLUTE

1

CONTINUOUS

2

ABSOLUTE

1

CONTINUOUS

2

Vds

Drain-Source Voltage

12V

8V

12V

8V

Vgs

Gate-Source Voltage

-8V

-3V

-8V

-3V

Ids

Drain Current

Idss

260mA

Idss

Igsf

Forward Gate Current

40mA

7mA

40mA

7mA

Input Power

25dBm

@ 3dB

Compression

25dBm

@ 3dB

Compression

Tch

Channel Temperature

175

oC

150

oC

175

oC

150

oC

Tstg

Storage Temperature

-65/175

oC

-65/150

oC

-65/175

oC

-65/150

oC

Pt

Total Power Dissipation

2.5W

2.1W

3.4W

2.8W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

Chip Thickness: 75

± 20 microns

All Dimensions In Microns

: Via Hole

No Via Hole For EPA080A

同様の部品番号 - EPA080AV

メーカー	部品番号	データシート	部品情報
List of Unclassifed Man...	EPA080A-70	22Kb / 2P	High Efficiency Heterojunction Power FET
Excelics Semiconductor,...	EPA080A-70	23Kb / 2P	High Efficiency Heterojunction Power FET

More results

同様の説明 - EPA080AV

メーカー	部品番号	データシート	部品情報
List of Unclassifed Man...	EPA090A	41Kb / 2P	High Efficiency Heterojunction Power FET
List of Unclassifed Man...	EPA040A-70	23Kb / 2P	High Efficiency Heterojunction Power FET
Excelics Semiconductor,...	EPA030C-70	86Kb / 1P	High Efficiency Heterojunction Power FET
	EPA030C	99Kb / 2P	High Efficiency Heterojunction Power FET
	EPA240B-100P	44Kb / 1P	High Efficiency Heterojunction Power FET
	EPA240D-CP083	40Kb / 1P	High Efficiency Heterojunction Power FET
	EPA025A	48Kb / 3P	High Efficiency Heterojunction Power FET
	EPA080A-70	23Kb / 2P	High Efficiency Heterojunction Power FET
	EPA120E	58Kb / 2P	High Efficiency Heterojunction Power FET
	EPA480C	28Kb / 2P	High Efficiency Heterojunction Power FET