AS4LC4M4DG-7SLASHXT datasheet(1/19 Pages) AUSTIN

部品番号	AS4LC4M4DG-7/XT

部品情報	4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

PDF	19 Pages

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メーカー	AUSTIN [Austin Semiconductor]

ホームページ	http://www.austinsemiconductor.com

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1 / 19 page

16 Me

16 Meg FPM DRAM

g FPM DRAM

AS4LC4M4

AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.

1

AS4LC4M4

Rev. 0.3 7/06

Austin Semiconductor, Inc.

4M x 4 CMOS DRAM

WITH FAST PAGE MODE, 3.3V

AVAILABLE AS MILITARY

SPECIFICATIONS

• MIL-STD-883

FEATURES

• Fast Page Mode Operation

• CAS\-before-RAS\ Refresh Capability

• RAS\-only and Hidden Refresh Capability

• Self-refresh Capability

• Fast Parallel Test Mode Capability

• TTL Compatible Inputs and Outputs

• Early Write or Output Enable Controlled Write

• JEDEC Standard Pinout

• Single +3.3V (±10%) Power Supply

OPTIONS

MARKINGS

• Timing

60ns access

-6

70ns access

-7

•

Package

Plastic TSOP, 24-pin

DG

• Operating Temperature Ranges

Military (-55oC to +125oC)

XT

Industrial (-40oC to +85oC)

IT

GENERAL DESCRIPTION

The Austin Semiconductor, Inc. AS4C4M4DG is a

4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering

high speed random access of memory cells within the same

row. This device features a +5V (±10%) power supply,

refresh cycle (2K), and fast access times (60 and 70ns). Other

features include CAS\-before-RAS\, RAS\-only refresh, self-

refresh operation (128ms refresh period), and Hidden refresh

capabilities. This 4M x 4 Fast Page Mode DRAM is

fabricated using an advanced CMOS process to realize high

bandwidth, low power consumption and high reliability. It may

be used as main memory for high level computers,

micro-

computers and personal computers.

PIN ASSIGNMENT

(Top View)

1

2

3

4

5

6

7

8

9

10

11

12

24

23

22

21

20

19

18

17

16

15

14

13

Vss

DQ3

DQ2

CAS\

OE\

A9

A8

A7

A6

A5

A4

Vss

Vcc

DQ0

DQ1

W\

RAS\

NC

A10

A0

A1

A2

A3

Vcc

FUNCTION

A0 - A10

Address Inputs

DQ0 -DQ3

Data In/Out

VSS

Ground

RAS\

Row Address Strobe

CAS\

Column Address Strobe

W\

Read/Write Input

OE\

Data Output Enable

VCC

Power (+5V)

NC

No Connect

PIN ASSIGNMENT

For more products and information

please visit our web site at

www.austinsemiconductor.com

ACTIVE POWER DISSIPATION

SPEED

2K

UNITS

-6

550

mW

-7

mW

PERFORMANCE RANGE

SPEED

tRAC

tCAC

tRC

tPC

UNITS

-6

60

15

110

40

ns

-7

ns

同様の部品番号 - AS4LC4M4DG-7/XT

メーカー	部品番号	データシート	部品情報
Austin Semiconductor	AS4LC4M4883C	191Kb / 20P	4 MEG x 4 DRAM 3.3V, EDO PAGE MODE
Alliance Semiconductor ...	AS4LC4M4F1	272Kb / 14P	4M횞4 CMOS DRAM (Fast Page) 3.3V Family
	AS4LC4M4F1-50JC	272Kb / 14P	4M횞4 CMOS DRAM (Fast Page) 3.3V Family
	AS4LC4M4F1-50JI	272Kb / 14P	4M횞4 CMOS DRAM (Fast Page) 3.3V Family
	AS4LC4M4F1-50TC	272Kb / 14P	4M횞4 CMOS DRAM (Fast Page) 3.3V Family

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同様の説明 - AS4LC4M4DG-7/XT

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