16 Me

16 Me

16 Me

16 Me

16 Meg FPM DRAM

g FPM DRAM

g FPM DRAM

g FPM DRAM

g FPM DRAM

AS4LC4M4

AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.

2

AS4LC4M4

Rev. 0.3 7/06

Austin Semiconductor, Inc.

FUNCTIONAL BLOCK DIAGRAM

RAS\

CAS\

W\

(A0 - A10)

(A0 - A10)

OE\

DQ0

to

DQ3

Control

Clocks

VBB Generator

Refresh Timer

Refresh Control

Refresh Counter

Row Address Buffer

Col. Address Buffer

Memory Array

4,194,304 x 4

Cells

Row Decoder

Column Decoder

Data In

Buffer

Data Out

Buffer

*Stresses greater than those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

these or any other conditions above those indicated in the

operation section of this specification is not implied.

Exposure to absolute maximum rating conditions for extended

periods may affect reliability. Junction temperature depends

upon package type, cycle time, loading, ambient temperature

and airflow, and humidity (plastics).

ABSOLUTE MAXIMUM RATINGS*

Voltage on any pin relative to V

Voltage on V

Storage Temperature (T

Power Dissipation (P

Short Circuit Output Current (I

ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS

A

A

NOTES:

1. V

CC

+ .13V/15ns, Pulse width is measured at V

CC

2. -1.3V/15ns, Pulse width is measured at V

SS

PARAMETER

SYMBOL

MIN

TYP

MAX

UNITS

Supply Voltage

3.0

3.3

3.6

V

Ground

00

0

V

Input High Voltage

2.0

---

1

V

Input Low Voltage

-0.3

2

---

0.8

V