D45C datasheet(1/4 Pages) MOTOROLA

部品番号	D45C

部品情報	4.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS

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メーカー	MOTOROLA [Motorola, Inc]

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Motorola Bipolar Power Transistor Device Data

Complementary Silicon Power

Transistor

. . . for general purpose driver or medium power output stages in CW or switching

applications.

• Low Collector–Emitter Saturation Voltage — 0.5 V (Max)

• High ft for Good Frequency Response

• Low Leakage Current

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

80

Vdc

Collector–Emitter Voltage

VCES

90

Vdc

Emitter Base Voltage

VEB

5.0

Vdc

Collector Current — Continuous

Peak (1)

IC

4.0

6.0

Adc

Total Power Dissipation @ TC = 25_C

Total Power Dissipation @ TA = 25_C

PD

30

1.67

Watts

W/

_C

Operating and Storage Junction Temperature Range

TJ, Tstg

– 55 to 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

4.2

_C/W

Thermal Resistance, Junction to Ambient

R

θJA

75

_C/W

Maximum Lead Temperature for Soldering Purposes: 1/8

″ from Case for 5 Seconds

TL

275

_C

(1) Pulse Width

v 6.0 ms, Duty Cycle v 50%.

ELECTRICAL CHARACTERISTICS (TJ = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

DC Current Gain

(VCE = 1.0 Vdc, IC = 0.2 Adc)

(VCE = 1.0 Vdc, IC = 1.0 Adc)

(VCE = 1.0 Vdc, IC = 2.0 Adc)

hFE

40

20

120

—

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by D45C/D

D45C

4.0 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

80 VOLTS

PNP

CASE 221A–06

TO–220AB

(REPLACES D44C)

同様の部品番号 - D45C

メーカー	部品番号	データシート	部品情報
Savantic, Inc.	D45C	92Kb / 3P	Silicon PNP Power Transistors
Inchange Semiconductor ...	D45C	133Kb / 3P	Silicon PNP Power Transistors
Savantic, Inc.	D45C	94Kb / 3P	Silicon PNP Power Transistors
New Jersey Semi-Conduct...	D45C	645Kb / 3P	With TO-220 package
Boca Semiconductor Corp...	D45C1	148Kb / 3P	COMPLEMENTARY SILICON POWER TRANSISTORS

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