D45C

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector Cutoff Current

(VCE = Rated VCES, VBE = 0)

ICES

—

—

0.1

µA

Emitter Cutoff Current

(VEB = 5.0 Vdc)

IEBO

—

—

10

µA

ON CHARACTERISTICS

Collector–Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 50 mAdc)

VCE(sat)

—

0.135

0.5

Vdc

Base–Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 100 mAdc)

VBE(sat)

—

0.85

1.3

Vdc

DYNAMIC CHARACTERISTICS

Collector Capacitance

(VCB = 10 Vdc, f = 1.0 MHz)

Ccb

—

125

—

pF

Gain Bandwidth Product

(IC = 20 mA, VCE = 4.0 Vdc, f = 20 MHz)

fT

—

40

—

MHz

SWITCHING TIMES

Delay and Rise Times

(IC = 1.0 Adc, IB1 = 0.1 Adc)

td + tr

—

50

75

ns

Storage Time

(IC = 1.0 Adc, IB1 = IB2 = 0.1 Adc)

ts

—

350

550

ns

Fall Time

(IC = 1.0 Adc, IB1 = IB2 = 0.1 Adc)

tf

—

50

75

ns

200

0.04

Figure 1. Typical DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

20

0.07 0.1

0.2

0.3

1.0

2.0

4.0

70

50

40

30

80

60

0.4

0.7

100

VCE = 1.0 Vdc

TJ = 25°C

1.0

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

10

1.0

0.01

dc

1.0

µs

2.0

0.1 ms

10

20

100

0.2

5.0

TC ≤ 70°C

DUTY CYCLE

≤ 50%

Figure 2. Maximum Rated Forward Bias

Safe Operating Area

90

3.0

1.0 ms

10

µs

0.02

0.03

0.05

0.3

0.1

0.5

2.0

3.0

5.0

3.0

7.0

30

50

70