STM32F102C4 datasheet(28/69 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F102x4, STM32F102x6

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Doc ID 15057 Rev 3

5.3.3

Embedded reset and power control block characteristics

The parameters given in Table 10 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 8.

5.3.4

Embedded reference voltage

The parameters given in Table 11 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 8.

Table 10.

Embedded reset and power control block characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VPVD

Programmable voltage

detector level selection

PLS[2:0]=000 (rising edge)

2.1

2.18

2.26

PLS[2:0]=000 (falling edge)

2.08

2.16

PLS[2:0]=001 (rising edge)

2.19

2.28

2.37

PLS[2:0]=001 (falling edge)

2.09

2.18

2.27

PLS[2:0]=010 (rising edge)

2.28

2.38

2.48

PLS[2:0]=010 (falling edge)

2.18

2.28

2.38

PLS[2:0]=011 (rising edge)

2.38

2.48

2.58

PLS[2:0]=011 (falling edge)

2.28

2.38

2.48

PLS[2:0]=100 (rising edge)

2.47

2.58

2.69

PLS[2:0]=100 (falling edge)

2.37

2.48

2.59

PLS[2:0]=101 (rising edge)

2.57

2.68

2.79

PLS[2:0]=101 (falling edge)

2.47

2.58

2.69

PLS[2:0]=110 (rising edge)

2.66

2.78

2.9

PLS[2:0]=110 (falling edge)

2.56

2.68

2.8

PLS[2:0]=111 (rising edge)

2.76

2.88

PLS[2:0]=111 (falling edge)

2.66

2.78

2.9

VPVDhyst

(2)

PVD hysteresis

100

VPOR/PDR

Power on/power down

reset threshold

Falling edge

1.8(1)

The product behavior is guaranteed by design down to the minimum VPOR/PDR value.

1.88

1.96

Rising edge

1.84

1.92

2.0

VPDRhyst

PDR hysteresis

tRSTTEMPO

(2)

Guaranteed by design, not tested in production.

Reset temporization

1.5

2.5

4.5

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