MBD110DWT1 MBD330DWT1 MBD770DWT1

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL CHARACTERISTICS

MBD110DWT1

Figure 1. Reverse Leakage

TA, AMBIENT TEMPERATURE (°C)

Figure 2. Forward Voltage

VF, FORWARD VOLTAGE (VOLTS)

Figure 3. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Noise Figure

PLO, LOCAL OSCILLATOR POWER (mW)

0.1

0.2

0.5

1.0

2.0

5.0

10

11

10

9

8

7

6

5

4

3

2

1

0

1.0

2.0

3.0

4.0

1.0

0.9

0.8

0.7

0.6

0.3

0.4

0.5

0.6

100

10

1.0

0.1

0.7

0.8

30

40

50

60

70

80

100

1.0

130

110

120

90

0.7

0.5

0.2

0.1

0.07

0.05

0.02

0.01

Figure 5. Noise Figure Test Circuit

LOCAL

OSCILLATOR

UHF

NOISE SOURCE

H.P. 349A

NOISE

FIGURE METER

H.P. 342A

DIODE IN

TUNED

MOUNT

IF AMPLIFIER

NF = 1.5 dB

f = 30 MHz

VR = 3.0 Vdc

LOCAL OSCILLATOR FREQUENCY = 1.0 GHz

(Test Circuit Figure 5)

TA = – 40°C

TA = 85°C

TA = 25°C

Note 3 – LS is measured on a package having a short instead

of a die, using an impedance bridge (Boonton Radio

Model 250A RX Meter).

Note 1 – CC and CT are measured using a capacitance

bridge (Boonton Electronics Model 75A or equiva-

lent).

Note 2 – Noise figure measured with diode under test in

tuned diode mount using UHF noise source and lo-

cal oscillator (LO) frequency of 1.0 GHz. The LO

power is adjusted for 1.0 mW. IF amplifier NF = 1.5

dB, f = 30 MHz, see Figure 5.

NOTES ON TESTING AND SPECIFICATIONS

MBD110DWT1

MBD110DWT1

MBD110DWT1

MBD110DWT1