ACE2301 datasheet(3/5 Pages) ACE

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ACE2301

Technology

P-Channel Enhancement Mode MOSFET

VER 1.2

Electrical Characteristics

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250uA

-20

Drain-Source On-State Resistance

RDS(ON)

VGS=-4.5V, ID=-2.8A

70.0

100.0

Drain-Source On-State Resistance

RDS(ON)

VGS=-2.5V, ID=-2.0A

85.0

150.0

mΩ

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=250uA

-0.4

-0.9

Zero Gate Voltage Drain Current

IDSS

VDS=-9.6V, VGS=0V

-1

Gate Body Leakage

IGSS

VGS=±8V, VDS=0V

±100

Forward Trans conductance

Gfs

VDS=-5V, ID=-2.8A

6.5

Dynamic

Total Gate Charge

5.8

Gate-Source Charge

Qgs

0.85

Gate-Drain Charge

Qgd

VDS=-6V, ID=-2.8A

VGS=-4.5V

1.7

Turn-On Delay Time

Td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=-6V,RL=6Ω

ID=-1A, VGEN=-4.5V

RG=6Ω

Input Capacitance

Ciss

415

Output Capacitance

Coss

223

Reverse Transfer Capacitance

Crss

VDS=-6V, VGS=0V

F=1.0MHz

Source-Drain Diode

Max. Diode Forward Current

-1.6

Diode Forward Voltage

VSD

IS=-1.6A,VGS=0V

-1.2

Note: Pulse test pulse width<=300us, duty cycle<=2%.

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