ACE2301

Technology

P-Channel Enhancement Mode MOSFET

VER 1.2

1

Description

The ACE2301 is the P-Channel logic enhancement mode power field effect transistor are produced

using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook

computer power management and Battery powered circuits, and low in-line power loss are needed in a

very small outline surface mount package.

Features

DS

=-20V

DS(ON)

DS(ON)

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

-20

V

Gate-Source Voltage

±12

V

Continuous Drain Current

-2.2

A

Pulsed Drain Current

1)

-8

A

1.25

Maximum Power Dissipation

0.8

W

Operating Junction Temperature

-55 to 150

Storage Temperature Range

-55 to 150

Junction to Ambient Thermal Resistance (PCB mounted)

2)

140

Note: 1.Repetitive Rating: Pulse width limited by the maximum junction temperature.

2.1-in

3.Guaranteed by design; not subject to production testing.