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CHA2066 データシート(PDF) 7 Page - United Monolithic Semiconductors |
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CHA2066 データシート(HTML) 7 Page - United Monolithic Semiconductors |
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7 / 8 page ![]() 10-16GHz Low Noise Amplifier CHA2066 Ref. : DSCHA20661257 -14-Sept-01 7/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Typical Chip Assembly B E Vd IN C = 100pF OUT Chip Biasing options This chip is self-biased, and flexibility is provided by the access to number of pads. the internal DC electrical schematic is given in order to use these pads in a safe way. The two requirements are : N°1 : Not exceed Vds = 3.5Volt ( internal Drain to Source voltage ). N°2 : Not biased in such a way that Vgs becomes positive. ( internal Gate to Source voltage ) We propose two standard biasing : Low Noise and low consumption : Vd = 4V and B & D grounded. All the other pads non connected ( NC ). Idd = 45mA & Pout-1dB = +10dBm Typical. ( Equivalent to A,B,C,D,E : NC and Vd=4V ; G1=+1.4V ; G2=+1.4V). Low Noise and high output power : Vd = 4V and B & E grounded. All the other pads non connected ( NC ). Idd = 55mA & Pout-1dB = +13dBm Typical. ( Equivalent to A,B,C,D,E : NC and Vd=5V ; G1=+1.4V ; G2=+4.0V). A file is available on request to help the biasing option tuning. |
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