CHA2066

Ref. : DSCHA20661257 -14-Sept-01

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

10-16GHz Low Noise Amplifier

GaAs Monolithic Microwave IC

Description

The CHA2066 is a two-stage wide band

monolithic low noise amplifier.

The circuit is manufactured with a standard

HEMT process : 0.25µm gate length, via

holes through the substrate, air bridges

and electron beam gate lithography.

It is supplied in chip form.

Main Features

■ Broad band performance 10-16GHz

■ 2.0dB noise figure, 10-16GHz

■ 16dB gain, ± 0.5dB gain flatness

■ Low DC power consumption, 50mA

■ 20dBm 3rd order intercept point

■ Chip size : 1,52 x 1,08 x 0.1mm

G1

NC

G2

Vd

RFin

RFout

A

B

C

D

E

NC

UMS

7272

0

2

4

6

8

10

12

14

16

18

20

7

8

9

10 11

12

13

14

15

16 17

18

19

20

Frequency ( GHz )

0

1

2

3

4

5

On wafer typical measurements.

Main Characteristics

Tamb = +25°C

Symbol

Parameter

Min

Typ

Max

Unit

NF

Noise figure, 10-16GHz

2.0

2.5

dB

GGain

14

16

dB

∆G

Gain flatness

± 0.5

± 1.0

dB

ESD Protections : Electrostatic discharge sensitive device observe handling precautions !