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HAL855UT-K データシート(PDF) 34 Page - Micronas

部品番号 HAL855UT-K
部品情報  Programmable Linear Hall-Effect Sensor with Arbitrary Output Characteristic
PDF  42 Pages
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メーカー  MICRONAS [Micronas]
ホームページ  http://www.micronas.com
Logo MICRONAS - Micronas

HAL855UT-K データシート(HTML) 34 Page - Micronas

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HAL855
DATA SHEET
34
Nov. 26, 2008; DSH000149_003EN
Micronas
Table 5–1: Telegram parameters (All voltages are referenced to GND.)
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
VDDL
Supply Voltage for Low Level
during Programming
15
5.5
6V
VDDH
Supply Voltage for High Level
during Programming
1
6.8
8.0
8.5
V
tr
Rise Time
1
−−
0.05
ms
tf
Fall Time
1
−−
0.05
ms
tp0
Bit Time on VDD
1
1.7
1.75
1.8
ms
tp0 is defined through the Sync Bit
tpOUT
Bit Time on Output Pin
3
2
3
4
ms
tpOUT is defined through the
Acknowledge Bit
tp1
Voltage Change for Logical 1
1, 3
50
65
80
%
% of tp0 or tpOUT
tPROG
Programming Time for EEPROM
1
95
100
105
ms
VDD,PROG
Supply Voltage during
Programming
1
4.9
5
5.1
V
trp
Rise Time of Charging Pulse
1
0.2
0.5
1
ms
tfp
Fall Time of Charging Pulse
1
0
−
1ms
tw
Delay Time of Charging Pulse
after Acknowledge
10.5
0.7
1ms
Vact
Voltage for an Activate Pulse
3
0
0
0.5
V
tact
Duration of an Activate Pulse
3
0.05
0.1
−
ms



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