K6R1016V1D

CMOS SRAM

Revision 3.0

- 1 -

June 2002

for AT&T

Document Title

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)

Operated at Commercial and Industrial Temperature Ranges.

Revision History

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,

please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev.No.

Rev. 0.0

Rev. 0.1

Rev. 0.2

Rev. 1.0

Rev. 2.0

Rev. 3.0

Remark

Preliminary

Preliminary

Preliminary

Final

Final

Final

History

Initial document.

Speed bin modify

Current modify

1. Delete 12ns speed bin.

2. Change Icc for Industrial mode.

1. Add tBA,tBLZ,tBHZ,tBW AC parematers.

1. Correct read cycle timing diagram(2).

Item

Previous

Current

8ns

100mA

90mA

10ns

85mA

75mA

Draft Data

May. 11. 2001

June. 18. 2001

September. 9. 2001

December. 18. 2001

February. 14. 2002

June. 19. 2002