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SST25WF080 データシート(PDF) 21 Page - Silicon Storage Technology, Inc |
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SST25WF080 データシート(HTML) 21 Page - Silicon Storage Technology, Inc |
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21 / 29 page ![]() Advance Information 8Mbit 1.8V SPI Serial Flash SST25WF080 21 ©2010 Silicon Storage Technology, Inc. S71203-03-000 04/10 Power-Up Specifications All functionalities and DC specifications are specified for a VDD ramp rate of greater than 1V per 100 ms (0V to 1.8V in less than 180 ms). If the VDD ramp rate is slower than 1V/100 ms, a hardware reset is required. The recom- mended VDD power-up to RESET# high time should be greater than 100 µs to ensure a proper reset. See Table 9 and Figures 25 and 26 for more information. FIGURE 25: Power-Up Reset Diagram TABLE 9: Recommended System Power-up Timings Symbol Parameter Minimum Units TPU-READ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. VDD Min to Read Operation 100 µs TPU-WRITE1 VDD Min to Write Operation 100 µs T9.0 1203 1203 F37.0 VDD RESET# CE# TPU-READ VDD min 0V VIH TRECR Note: See Table 2 on page 5 for TRECR parameter. |
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