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TDF8591TH データシート(PDF) 25 Page - NXP Semiconductors

部品番号 TDF8591TH
部品情報  2 X 100 W SE (4 OHM) or 1 X 310 W BTL (4 OHM) class-D amplifier
PDF  34 Pages
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メーカー  NXP [NXP Semiconductors]
ホームページ  http://www.nxp.com
Logo NXP - NXP Semiconductors

TDF8591TH データシート(HTML) 25 Page - NXP Semiconductors

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TDF8591TH_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 5 March 2008
25 of 34
NXP Semiconductors
TDF8591TH
2
× 100 W SE (4 Ω) or 1 × 310 W BTL (4 Ω) class-D amplifier
(1) VP = ±14 V.
(2) VP = ±27 V and ±29 V.
Fig 22. Common mode rejection ratio as a function of frequency; BTL application
001aah210
60
100
CMRR
(dB)
20
(2)
(1)
f (kHz)
10−2
102
10
10−1
1
(1) ripple in antiphase.
(2) ripple on VDD only.
(3) ripple on VSS only.
(4) ripple in phase.
(1) ripple on VSS only.
(2) ripple on VDD only.
(3) ripple in phase.
(4) ripple in antiphase.
a. SE application; RL =4 Ω
b. BTL application; RL =8 Ω
Fig 23. Supply voltage ripple rejection as a function of frequency; Standby mode
001aah211
80
100
120
SVRR
(dB)
60
(2)
(4)
(1)
(3)
f (kHz)
10−2
102
10
10−1
1
001aah212
80
100
120
SVRR
(dB)
60
(2)
(4)
(1)
(3)
f (kHz)
10−2
102
10
10−1
1



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