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データシートサーチシステム |
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データシートサーチシステム |
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L6730B データシート(PDF) 12 Page - STMicroelectronics |
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L6730B データシート(HTML) 12 Page - STMicroelectronics |
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12 / 52 page  Electrical characteristics L6730 - L6730B 12/52 Doc ID 11938 Rev 3 IFB I.I. bias current VFB = 0V 0.290 0.5 μA Ext Ref Clamp 2.3 V VOFFSET Error amplifier offset Vref = 0.6V -5 +5 mV GV Open loop voltage gain Guaranteed by design 100 dB GBWP Gain-bandwidth product Guaranteed by design 10 MHz SR Slew-rate COMP = 10pF Guaranteed by design 5V/ μs Gate drivers RHGATE_ON High side source resistance VBOOT - VPHASE = 5V 1.7 Ω RHGATE_OFF High side sink resistance VBOOT - VPHASE = 5V 1.12 Ω RLGATE_ON Low side source resistance VCCDR = 5V 1.15 Ω RLGATE_OFF Low side sink resistance VCCDR = 5V 0.6 Ω Protections IOCH OCH current source VOCH = 1.7V 90 100 110 μA IOCL OCL current source 90 100 110 μA OVP Over voltage trip (VFB / VEAREF) VFB rising VEAREF = 0.6V 120 % VFB falling VEAREF = 0.6V 117 % IOSC OSC sourcing current VFB > OVP Trip VOSC = 3V 30 mA Power Good Upper threshold (VFB / VEAREF) VFB rising 108 110 112 % Lower threshold (VFB / VEAREF) VFB falling 88 90 92 % VPGOOD PGOOD voltage low IPGOOD = -5mA 0.5 V Table 5. Electrical characteristics (continued) Symbol Parameter Test condition Min. Typ. Max. Unit |
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