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NCE7580D データシート(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE7580D データシート(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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1 / 7 page  NCE7580D Pb Free Product http://www.ncepower.com Wuxi NCE Power Semiconductor Co., Ltd Page v1.0 1 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE7580D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. GENERAL FEATURES ● VDS = 75V,ID =80A RDS(ON) <8mΩ @ VGS=10V（Typ：6.5mΩ） ● Special process technology for high ESD capability ● Special designed for Convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Schematic diagram Marking and pin Assignment TO-263-2L top view Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE7580D NCE7580D TO-263-2L - - - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 75 V Gate-Source Voltage VGS ±25 V Drain Current-Continuous ID 80 A Drain Current-Continuous(TC=100℃) ID (100℃) 78 A Pulsed Drain Current IDM 320 A Maximum Power Dissipation PD 30 W Peak diode recovery voltage dv/dt 170 V/ns Derating factor 1.13 W/℃ Single pulse avalanche energy (Note 5) EAS 580 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ |
同様の部品番号 - NCE7580D |
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同様の説明 - NCE7580D |
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