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VN771K データシート(PDF) 13 Page - STMicroelectronics |
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VN771K データシート(HTML) 13 Page - STMicroelectronics |
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13 / 33 page ![]() VN771K Electrical specifications Doc ID 12534 Rev 4 13/33 -40°C < Tj < 150°C, unless otherwise specified. Table 16. Source drain diode Symbol Parameter Test conditions Min Typ Max Unit VSD (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD =7A; VIN =0V - 0.8 - V trr Reverse recovery time ISD = 7A; dI/dt = 40A/µs VDD = 30V; L = 200µH -300 - ns Qrr Reverse recovery charge -0.80 - µC IRRM Reverse recovery current -5 - A Table 17. Protections Symbol Parameter Test conditions Min Typ Max Unit Ilim Drain current limit VIN =5V; VDS =13V VIN =5V; VDS =13V; Tj =125°C 12 15 18 24 24 A A tdlim Step response current limit VIN =5V; VDS = 13V - 45 - µs Tjsh Over temperature shutdown 150 175 - °C Tjrs Over temperature reset 135 - - °C Igf Fault sink current VIN = 5V; VDS =13V; Tj =Tjsh 10 15 20 mA Eas Single pulse avalanche energy starting Tj =25°C; VDD = 24V VIN =5V; Rgen = RIN MIN =10Ω; L=24mH 400 - - mJ |
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