SMM310

Silicon MEMS Microphone

Data Sheet

5

V1.1, 2008-05-28

Pin Definition and Function

Maximum Ratings

ESD robustness

Acoustical and Electrical Characteristics

Table 1

Pin Definition and Function

Pin No.

Symbol

Function

1

OUT

Output

2

GND

Ground

3

GND

Ground

4

V

DD

Power

Table 2

Maximum Ratings

Storage Temperature

T

STG

-40 °C - 125 °C

Operating Temperature Range

T

A

-40 °C - 85 °C

Operating Voltage Range

V

DD

1.5 V - 3.3 V

Table 3

Typical robustness to electrostatic discharge

ESD capability all pins (HBM, JESD22-A114)

V

ESD_HBM

± 4kV

ESD capability all pins (MM, JESD22-A115)

V

ESD_MM

± 400 V

Table 4

Unless otherwise noted, typical test conditions are

T

measured in a pressure chamber test setup. All voltages refer to GND node

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Sensitivity 1 kHz

S

1kHz

-45

-42

-39

dB(V/Pa)

1 kHz, 94 dB SPL

Relative Sensitivity 4 kHz

4kHz

-1

+4

dB

Relative to sensitivity 1 kHz

Relative Sensitivity 240 Hz

240Hz

-1

+1

dB

Relative to sensitivity 1 kHz

Equivalent Noise Level

ENL

29.5

32.5

dB(pso)

1) Psophometrically weighted noise measurement with CCITT-filter (ITU-T Rec. P.53)

35

dB(A)

2) Noise measurement with A-weighting filter (IEC 651)

Signal-to-Noise Ratio

SNR

61.5

64.5

dB(pso)

CCITT-weighted

59

dB(A)

A-weighted

Total Harmonic Distortion

THD

0.1

0.5

%

104 dB SPL, 1 kHz

Current Consumption

I

CC

80

140

µA

V

Power Supply Rejection Ratio

PSRR

-55

-40

dBr

100 mV superimposed on

V

DC Output Voltage

V

OUT

1.2

V

DC Voltage at Pin 1

Output Impedance

Z

OUT

7

Ω

1kHz