DMN2004K datasheet(1/6 Pages) DIODES

部品番号	DMN2004K

部品情報	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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メーカー	DIODES [Diodes Incorporated]

ホームページ	http://www.diodes.com

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1 / 6 page

DMN2004K

Document number: DS30938 Rev. 5 - 2

1 of 6

www.diodes.com

November 2010

DMN2004K

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Product Summary

V(BR)DSS

RDS(ON)

ID

TA = 25°C

20V

0.55

Ω @ VGS = 4.5V

630mA

0.9

Ω @ VGS = 1.8V

410mA

Description and Applications

This new generation MOSFET has been designed to minimize the on-

state resistance (RDS(on)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

•

DC-DC Converters

•

Power management functions

Features and Benefits

•

Low On-Resistance: RDS(ON) = 550(max)mΩ @ VGS = 4.5V

•

Low Gate Threshold Voltage

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

ESD Protected up to 2KV

•

Lead Free By Design/RoHS Compliant (Note 1)

•

"Green" Device (Note 2)

•

Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

•

Case: SOT-23

•

Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminals: Finish

⎯ Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

•

Terminal Connections: See Diagram

•

Weight: 0.008 grams (approximate)

Ordering Information (Note 3)

Part Number

Case

Packaging

DMN2004K-7

SOT-23

3000/Tape & Reel

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year

2006

2007

2008

2009

2010

2011

2012

Code

T

U

V

W

X

Y

Z

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

SOT-23

Top View

D

G

S

Top View

NAB = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: T = 2006)

M = Month (ex: 9 = September)

ESD PROTECTED TO 2kV

Source

Gate

Protection

Diode

Gate

Drain

Equivalent Circuit

NAB

同様の部品番号 - DMN2004K

メーカー	部品番号	データシート	部品情報
Diodes Incorporated	DMN2004K	152Kb / 4P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS30938 Rev. 2 - 2
	DMN2004K-7	152Kb / 4P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS30938 Rev. 2 - 2
	DMN2004K	153Kb / 6P	N-CHANNEL ENHANCEMENT MODE MOSFET Rev 9

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