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DMN2004K データシート(PDF) 2 Page - Diodes Incorporated

部品番号 DMN2004K
部品情報  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  6 Pages
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メーカー  DIODES [Diodes Incorporated]
ホームページ  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN2004K データシート(HTML) 2 Page - Diodes Incorporated

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DMN2004K
Document number: DS30938 Rev. 5 - 2
2 of 6
www.diodes.com
November 2010
© Diodes Incorporated
DMN2004K
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
Drain Current (Note 4) VGS = 4.5V
Steady
State
TA = 25°C
TA = 85°C
ID
630
450
mA
Drain Current (Note 4) VGS = 1.8V
Steady
State
TA = 25°C
TA = 85°C
ID
410
300
mA
Pulsed Drain Current (Note 5)
IDM
1.5
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 4)
PD
350
mW
Thermal Resistance, Junction to Ambient
RθJA
357
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BVDSS
20
⎯
⎯
V
VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
1
μA
VDS = 16V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±1
μA
VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(th)
0.5
⎯
1.0
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
⎯
0.4
0.5
0.7
0.55
0.70
0.9
Ω
VGS = 4.5V, ID = 540mA
VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 350mA
Forward Transfer Admittance
|Yfs|
200
⎯
⎯
ms
VDS =10V, ID = 0.2A
Source Current
IS
⎯
⎯
0.5
A
⎯
Diode Forward Voltage (Note 6)
VSD
0.6
⎯
1
V
VGS = 0V, IS = 500mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
⎯
⎯
150
pF
VDS = 16V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
⎯
⎯
25
pF
Reverse Transfer Capacitance
Crss
⎯
⎯
20
pF
Gate Resistance
Rg
⎯
292
⎯
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge
Qg
⎯
0.9
⎯
nC
VDS = 15V, VGS = 4.5V, ID = 0.5A
Gate-Source Charge
Qgs
⎯
0.2
⎯
Gate-Drain Charge
Qgd
⎯
0.2
⎯
Turn-On Delay Time
tD(on)
⎯
5.7
⎯
ns
VGS = 8V, VDS = 15V,
RG = 6Ω, RL = 30Ω
Turn-On Rise Time
tr
⎯
8.4
⎯
Turn-Off Delay Time
tD(off)
⎯
59.4
⎯
Turn-Off Fall Time
tf
⎯
37.6
⎯
Body Diode Reverse Recovery Time
trr
⎯
5.5
⎯
ns
IS = 0.5A, dI/dt = -100A/μs
Body Diode Reverse Recovery Charge
Qrr
⎯
0.85
⎯
nC
IS = 0.5A, dI/dt = -100A/μs
Notes:
4. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.
5. Pulse width
≤10μS, Duty Cycle ≤1%.
6. Short duration pulse test used to minimize self-heating effect.



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