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DMN2040LSD データシート(PDF) 1 Page - Diodes Incorporated |
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DMN2040LSD データシート(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  DMN2040LSD Document number: DS31517 Rev. 4 - 2 1 of 4 www.diodes.com November 2008 © Diodes Incorporated DMN2040LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • 26m Ω @ VGS = 4.5V • 36m Ω @ VGS = 2.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • "Green" Device (Note 4) • Qualified to AEC-Q 101 Standards for High Reliability Mechanical Data • Case: SOP-8L • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals Connections: See Diagram • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.072 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Drain Current (Note 1) Steady State TA = 25°C TA = 70°C ID 7.0 5.6 A Pulsed Drain Current (Note 3) IDM 30 A Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 1) PD 2 W Thermal Resistance, Junction to Ambient RθJA 62.5 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 20 ⎯ ⎯ V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 0.6 ⎯ 1.2 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) ⎯ 19 26 26 36 m Ω VGS = 4.5V, ID = 6.0A VGS = 2.5V, ID = 5.2A Forward Transfer Admittance gfs ⎯ 12 ⎯ ms VDS = 10V, ID = 6.0A Diode Forward Voltage (Note 5) VSD 0.5 ⎯ 1.2 V VGS = 0V, IS = 1.7A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 562 ⎯ pF VDS = 10V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ 75 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 65 ⎯ pF Notes: 1. Device mounted on 2 oz. Copper pads on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width ≤10μS, Duty Cycle ≤1%. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Short duration pulse test used to minimize self-heating effect. SOP-8L TOP VIEW Internal Schematic TOP VIEW S1 D2 S2 D1 G2 G1 D1 D2 D 2 S 2 G 2 D 1 S 1 G 1 N-Channel MOSFET N-Channel MOSFET Please click here to visit our online spice models database. |
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