MCP6V27T datasheet(5/46 Pages) MICROCHIP

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DS25007A-page 5

MCP6V27

TABLE 1-3:

TEMPERATURE SPECIFICATIONS

TABLE 1-2:

AC ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.3V to +5.5V, VSS = GND,

VCM = VDD/3, VOUT =VDD/2, VL =VDD/2, RL = 10 kΩ to VL and CL = 60 pF (refer to Figure 1-4 and Figure 1-5).

Parameters

Sym

Min Typ

Max

Units

Conditions

Amplifier AC Response

Gain Bandwidth Product

GBWP —

2.0

—

MHz

Slew Rate

—

1.0

—

V/µs

Phase Margin

—

G = +1

Amplifier Noise Response

Input Noise Voltage

Eni

—0.32

—

µVP-P

f = 0.01 Hz to 1 Hz

Eni

—1.0

—

µVP-P

f = 0.1 Hz to 10 Hz

Input Noise Voltage Density

eni

—50

—

nV/

√Hz f < 5 kHz

eni

—29

—

nV/

√Hz f = 100 kHz

Input Noise Current Density

ini

—0.6

—

fA/

√Hz

Amplifier Distortion (Note 1)

Intermodulation Distortion (AC)

IMD

—

µVPK

VCM tone = 50 mVPK at 1 kHz,

GN = 1

Amplifier Step Response

Start Up Time

tSTR

—

µs

G = +1, VOS within 50 µV of its final value

(Note 2)

Offset Correction Settling Time

tSTL

—

150

—

µs

G = +1, VIN step of 2V,

VOS within 50 µV of its final value

Output Overdrive Recovery Time

tODR

—

µs

G = -100, ±0.5V input overdrive to VDD/2,

VIN 50% point to VOUT 90% point

(Note 3)

Note 1:

These parameters were characterized using the circuit in Figure 1-6. In Figure 2-37 and Figure 2-38, there

is an IMD tone at DC, a residual tone at 1 kHz, other IMD tones and clock tones.

High gains behave differently; see Section 4.3.3, Offset at Power Up.

tODR includes some uncertainty due to clock edge timing.

Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VDD = +2.3V to +5.5V, VSS = GND.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Temperature Ranges

Specified Temperature Range

-40

—

+125

°C

Operating Temperature Range

-40

—

+125

°C

(Note 1)

Storage Temperature Range

-65

—

+150

°C

Thermal Package Resistances

Thermal Resistance, 8L-4x4 DFN

θJA

—48

—

°C/W (Note 2)

Thermal Resistance, 8L-MSOP

θJA

—211

—

°C/W

Thermal Resistance, 8L-SOIC

θJA

—150

—

°C/W

Note 1:

Operation must not cause TJ to exceed Maximum Junction Temperature specification (+150°C).

Measured on a standard JC51-7, four layer printed circuit board with ground plane and vias.

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