IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= I

15

25

S

Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

C

ies

1500

pF

C

oes

V

130

pF

C

res

42

pF

Q

g

68

100 nC

Q

ge

I

C

= I

15

30 nC

Q

gc

20

40 nC

t

d(on)

15

ns

t

ri

25

ns

t

d(off)

175

400

ns

t

fi

260

400

ns

E

off

24 mJ

t

d(on)

15

ns

t

ri

25

ns

E

on

0.2

mJ

t

d(off)

400

ns

t

fi

400

ns

E

off

3mJ

R

thJC

0.83 K/W

R

thCK

TO-247

0.25

K/W

Inductive load, T

°°°°C

I

C

= I

V

Inductive load, T

°°°°C

I

C

= I

V

TO-247 AD Outline

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205 0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40

0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

1

2

3

IXGH 28N60B

IXGT 28N60B

TO-268 Outline

Terminals: 1 - Gate

2 - Collector

3 - Emitter

Tab - Collector

Terminals:

1 - Gate

2 - Collector

3 - Emitter

Tab-Collector