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IMX53CEC データシート(PDF) 29 Page - Freescale Semiconductor, Inc |
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IMX53CEC データシート(HTML) 29 Page - Freescale Semiconductor, Inc |
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29 / 204 page ![]() Electrical Characteristics i.MX53xD Applications Processors for Consumer Products, Rev. 2 Freescale Semiconductor 29 NOTE The term ‘OVDD’ in this section refers to the associated supply rail of an input or output. The association is shown in Table 112. Figure 3. Circuit for Parameters Voh and Vol for IO Cells 4.3.1 General Purpose I/O (GPIO) DC Parameters The parameters in Table 11 are guaranteed per the operating ranges in Table 7, unless otherwise noted. Table 11 shows DC parameters for GPIO pads, operating at two supply ranges: • 1.1 V to 1.3 V • 1.65 V to 3.1 V Table 11. GPIO I/O DC Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit High-level output voltage1 Voh Iout = –1 mA Iout= specified Ioh Drive OVDD – 0.15 0.8*OVDD —— V Low-level output voltage1 Vol Iout = 1 mA Iout= specified Iol Drive —— 0.15 0.2 × OVDD V High-level output current (1.1-1.3V OVDD) Ioh Vout = 0.8 ×OVDD Low drive Medium drive High drive Max drive –0.85 –1.7 –2.5 –3.4 —— mA Low-level output current (1.1-1.3V OVDD) Iol Vout = 0.2 ×OVDD Low drive Medium drive High drive Max drive 0.9 1.9 2.9 3.8 —— mA High-level output current (1.65-3.1V OVDD) Ioh Vout = 0.8 ×OVDD Low drive Medium drive High drive Max drive –2.1 –4.2 –6.3 –8.4 —— mA |
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