2N6796LCC4 datasheet(1/2 Pages) SEME-LAB

部品番号	2N6796LCC4

部品情報	N-CHANNEL POWER MOSFET

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10/99

2N6796LCC4

VDSS

= 100V

ID

= 7.4A

RDS(ON) = 0.18Ω

Ω

FEATURES

• Hermetically sealed ceramic surface

mount package

• Small footprint

• Simple drive requirements

VDS

Drain–Source Voltage

VDGR

Drain–Gate Voltage

(VGS = 1.0mΩ)

VGS

Gate–Source Voltage

ID

Drain Current Continuous

IDM

Drain Current Pulsed

PD

Total Device Dissipation @ TC = 25°C

Derate above 25°C

TJ , TSTG Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

RθJC

Thermal Resistance Junction to Case

RθJC

Thermal Resistance Junction to Ambient

TL

Maximum Lead Temperature 1.5mm from Case for 10 secs.

100V

±20V

7.4A

30A

22W

0.17°C/W

–55 to +150°C

5.0°CW

175°CW

300°C

MECHANICAL DATA

Dimensions in mm (inches)

LCC4 CERAMIC SURFACE MOUNT PACKAGE

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

Underside View

Pads 6, 7, 8, 9, 10, 11, 12, 13.

Source

Pads 4,5

Gate

Pads 1,2,15,16,17,18

Drain

Pads 3,14

Not Connected

1.39 (0.055)

1.15 (0.045)

0.76 (0.030)

0.51 (0.020)

1.39 (0.055)

1.02 (0.040)

15 16

13

12

14

3

4

5

6

7

17

18

1

2

11

10

8

9

9.14 (0.360)

8.64 (0.340)

1.27 (0.050)

1.07 (0.040)

≈ 2.16 (0.085)

7.62 (0.300)

7.12 (0.280)

1.65 (0.065)

1.40 (0.055)

0.33 (0.013)

0.08 (0.003)

0.43 (0.017)

0.18 (0.007

Rad.

N-CHANNEL

POWER MOSFET

同様の部品番号 - 2N6796LCC4

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Intersil Corporation	2N6796	140Kb / 7P	8A, 100V, 0.180 Ohm, N-Channel Power MOSFET November 1998
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