2N6796LCC4 datasheet(2/2 Pages) SEME-LAB

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2N6796LCC4

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Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS Drain–Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSSF

Gate–Body Leakage, Forward

IGSSR

Gate–Body Leakage, Reverse

VGS(th)

Gate Threshold Voltage

RDS(on)

Static Drain–Source On–Resistance

VDS(on)

Drain–Source On–Voltage

gfs

Forward Transconductance

Ciss

Input Capacitance

Coss

Output capacitance

Crss

Reverse Transfer Capacitance

VGS = 0

ID = 0.25mA

VDS = Rated VDS VGS = 0

VDS = 80V

VGS = 0A

TJ = 125°C

VDS = 0

VGS = 20V

VDS = 0

VGS = -20V

VDS = VGS

ID = 0.5mA

VGS = 10V

ID = 4.7A

TA = 125°C

VGS = 15V

ID = 7.4A

VGS = 15V

ID = 4.7A

VDS = 25V

VGS = 0

f = 1.0MHz

100

250

1000

100

-100

0.18

0.35

1.56

350

900

150

500

150

µA

Ω

mhos

OFF CHARACTERISTICS

ON CHARACTERISTICS

DYNAMIC CHARACTERISTICS

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