Any changing of specification will not be informed individual

BAV99W

Dual Series Chips

Surface Mount Switching Diode

Rating

Symbol

Value

Unit

Reverse Voltage

VR

70

Vdc

Forward Current

IF

215

mAdc

Peak Forward Surge Current

IFM(surge)

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board(1)

TA = 25°C

Derate above 25

°C

PD

200

1.6

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

625

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

– 65 to +150

°C

DEVICE MARKING

BAV99W = A7, KJG

-Jun-2004 Rev. B

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(I(BR) = 100 µAdc)

V(BR)

70

—

Vdc

Reverse Voltage Leakage Current

(VR = 25 Vdc, TJ = 150°C)

(VR = 70 Vdc)

(VR = 70 Vdc, TJ = 150°C)

IR

—

—

—

30

2.5

50

µAdc

Diode Capacitance

(VR = 0, f = 1.0 MHz)

CD

—

1.5

pF

Forward Voltage

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 50 mAdc)

(IF = 150 mAdc)

VF

—

—

—

—

715

855

1000

1250

mVdc

Reverse Recovery Time

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL = 100 Ω

trr

—

6.0

ns

1. FR–5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.

FEATURES

Fast Switching Speed

Surface Mount Package Ideally Suited for

Automatic Insertion

For General Purpose Switching Applications

High Conductance

3

1

2

C ATHODE

ANODE

ANODE

C ATHODE

Dim

Min

Max

A

1.800

2.200

B

1.150

1.350

C

0.800

1.000

D

0.300

0.400

G

1.200

1.400

H

0.000

0.100

J

0.100

0.250

K

0.350

0.500

L

0.590

0.720

S

2.000

2.400

V

0.280

0.420

All Dimension in mm

SOT-323(SC-70)

K

J

C

H

L

A

B S

G

V

3

1

2

D

Top View

http://www.SeCoSGmbH.com

Elektronische Bauelemente

SC-70

SOT-323

01

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RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free