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L6226QTR データシート(PDF) 7 Page - STMicroelectronics |
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L6226QTR データシート(HTML) 7 Page - STMicroelectronics |
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7 / 29 page ![]() L6226Q Electrical characteristics Doc ID 14335 Rev 5 7/29 3 Electrical characteristics TA = 25 °C, Vs = 48 V, unless otherwise specified Table 5. Electrical characteristics Symbol Parameter Test condition Min Typ Max Unit VSth(ON) Turn-on threshold 5.8 6.3 6.8 V VSth(OFF) Turn-off threshold 5 5.5 6 V IS Quiescent supply current All bridges OFF; TJ = -25 °C to 125 °C (1) 510 mA TJ(OFF) Thermal shutdown temperature 165 °C Output DMOS transistors RDS(on) High-side + low-side switch ON resistance TJ = 25 °C 1.47 1.69 Ω TJ = 125 °C (1) 2.35 2.70 Ω IDSS Leakage current EN = Low; OUT = VS 2mA EN = Low; OUT = GND -0.3 mA Source drain diodes VSD Forward ON voltage ISD = 2.8 A, EN = LOW 1.15 1.3 V trr Reverse recovery time If = 1.4 A 300 ns tfr Forward recovery time 200 ns Logic input VIL Low level logic input voltage -0.3 0.8 V VIH High level logic input voltage 2 7 V IIL Low level logic input current GND logic input voltage -10 µA IIH High level logic input current 7 V logic input voltage 10 µA Vth(ON) Turn-on input threshold 1.8 2.0 V Vth(OFF) Turn-off input threshold 0.8 1.3 V Vth(HYS) Input threshold hysteresis 0.25 0.5 V Switching characteristics tD(on)EN Enable to out turn ON delay time (2) ILOAD =1.4 A, resistive load 500 800 ns tD(on)IN Input to out turn ON delay time ILOAD =1.4 A, resistive load (dead time included) 1.9 µs tRISE Output rise time (2) ILOAD =1.4 A, resistive load 40 250 ns tD(off)EN Enable to out turn OFF delay time (2) ILOAD =1.4 A, resistive load 500 800 1000 ns tD(off)IN Input to out turn OFF delay time ILOAD =1.4 A, resistive load 500 800 1000 ns tFALL Output fall time (2) ILOAD =1.4 A, resistive load 40 250 ns |
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