2N5741 datasheet(2/3 Pages) ISC

部品番号	2N5741

部品情報	Silicon PNP Power Transistors

PDF	3 Pages

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2N5741 2N5742

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

2N5741

-60

VCEO(SUS)

Collector-emitter

sustaining voltage

2N5742

IC=-0.2A ;IB=0

-100

VCEsat-1

Collector-emitter saturation voltage

IC=-10A; IB=-1A

-1.0

VCEsat-2

Collector-emitter saturation voltage

IC=-20A ;IB=-4A

-3.0

VBEsat

Base-emitter saturation voltage

IC=-10A; IB=-1A

-1.8

VBE

Base-emitter on voltage

IC=-10A ; VCE=-5V

-1.5

ICBO

Collector cut-off current

VCB=Rated VCBO; IE=0

-0.1

ICEX

Collector cut-off current

VCE= Rated VCEO; VBE(off)=1.5V

TC=150℃

-0.5

-5.0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-1.0

hFE-1

DC current gain

IC=-10A ; VCE=-5V

hFE-2

DC current gain

IC=-20A ; VCE=-5V

Transition frequency

IC=-1A ; VCE=-10V

MHz

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