2N5741 datasheet(1/3 Pages) ISC

部品番号	2N5741

部品情報	Silicon PNP Power Transistors

PDF	3 Pages

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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1 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2N5741 2N5742

DESCRIPTION

・With TO-3 package

・Low collector saturation voltage

・Fast switching speed

APPLICATIONS

・For general–purpose switching

and power amplifier applications.

PINNING

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N5741

-60

VCBO

Collector-base voltage

2N5742

Open emitter

-100

V

2N5741

-60

VCEO

Collector-emitter voltage

2N5742

Open base

-100

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current

-20

A

PC

Collector power dissipation

TC=100℃

65

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

0.875

℃/W

Fig.1 simplified outline (TO-3) and symbol

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