2SB541 datasheet(1/2 Pages) ISC

部品番号	2SB541

部品情報	isc Silicon PNP Power Transistors

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

2SB541

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -120V(Min)

·High Power Dissipation-

: PC= 100W(Max)@TC=25℃

·Complement to Type 2SD388

APPLICATIONS

·Designed for audio frequency power amplifier applications.

·Suitable for output stage of 40~50 watts audio amplifiers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-110

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-8

A

ICM

Collector Current-Pulse

-12

A

PC

Collector Power Dissipation

@TC=25℃

80

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

isc Website：www.iscsemi.cn

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